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In stock
Brand | Samsung |
---|---|
Interface | PCIe Gen 4.0 x4, NVMe 2.0 |
Sequential Read | Up to 7,450 MB/s, Performance may vary based on system hardware & configuration |
Sequential Write | Up to 6,900 MB/s, Performance may vary based on system hardware & configuration |
Weight | 0.028 kg |
Application | Client PCs, Game Consoles |
Form Factor | M.2 (2280) |
Dimensions | 80 x 24.3 x 8.2 mm (with heatsink) |
Storage Memory | Samsung V-NAND 3-bit MLC |
Controller | Samsung in-house Controller |
Cache Memory | Samsung 2GB Low Power DDR4 SDRAM |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) |
WWN Support | Not supported |
Device Sleep Mode Support | Yes |
Random Read (4 KB, QD32) | Up to 1,400,000 IOPS, Performance may vary based on system hardware & configuration |
Random Write (4KB, QD32) | Up to 1,550,000 IOPS, Performance may vary based on system hardware & configuration |
Random Read (4 KB, QD1) | Up to 22,000 IOPS, Performance may vary based on system hardware & configuration |
Random Write (4 KB, QD1) | Up to 80,000 IOPS, Performance may vary based on system hardware & configuration |
Allowable Voltage | 3.3 V ± 5 % Allowable voltage |
Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) |
Operating Temperature | 0 – 70 ℃ Operating Temperature |
Shock | 1,500 G & 0.5 ms (Half sine) |
In stock
Brand | Micron |
---|---|
Product Series | Micron 2450 Series |
Hardware Platform | All systems with M.2 2230 slot |
Weight | 1.76 ounces |
Dimensions | 1.18 x 0.86 x 0.1 inches |
Memory type | DDR3 SDRAM |
Flash Memory Size | 1 TB |
Hard Drive Interface | PCIE x 4 |
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